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Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process

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Ce-doped strontium bismuth titanate (SrBi4Ti4O15, SBT) powders were prepared by glycine-nitrate process at 400-500°C and the ceramics were sintered at 980°C. The phase composition, morphology and electric properties were investigated.… Click to show full abstract

Ce-doped strontium bismuth titanate (SrBi4Ti4O15, SBT) powders were prepared by glycine-nitrate process at 400-500°C and the ceramics were sintered at 980°C. The phase composition, morphology and electric properties were investigated. It was found that the calcined powders consist of a single phase SBT and the calcination temperature is lower than that for the conventional solid state method. The morphology of Cedoped SBT is flake-like and the layer size decreases with Ce-addition from 12 to 2μm confirming that the addition of Ce3+ inhibits grain growth. The Curie temperature of Ce-doped SBT increased for about 20°C compared to the pure SBT. The tan δ was ~0.005 at 35°C and even below 0.05 up to 400°C. The temperature coefficient of dielectric constant was ~0.012 and the rate of frequency change was 0.01-0.04, which indicated the high stability of dielectric properties of the Ce-doped SBT. Impedance analysis revealed that the conduction mechanism of the Ce-doped SrBi4Ti4O15 ceramics is mainly grain conduction.

Keywords: glycine nitrate; dielectric; dielectric properties; properties doped; doped srbi4ti4o15; nitrate process

Journal Title: Processing and Application of Ceramics
Year Published: 2018

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