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Model of the Generation of Electron Excitations in a Crystal during Events of Chemical Interaction between Hydrogen Atoms on the Surface of a Semiconductor

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The generation of excess electrons in semiconductor structures via the heterogeneous chemical reaction of the recombination of hydrogen atoms is investigated theoretically. The theoretically possible efficiency of the conversion of… Click to show full abstract

The generation of excess electrons in semiconductor structures via the heterogeneous chemical reaction of the recombination of hydrogen atoms is investigated theoretically. The theoretically possible efficiency of the conversion of chemical energy to electrical energy using semiconductor heterostructures is determined. The micromechanism of the generation of chemocurrent is described in an approximation of a multiple-quantum vibrational electronic transition.

Keywords: semiconductor; generation electron; generation; hydrogen atoms; model generation

Journal Title: Bulletin of the Russian Academy of Sciences: Physics
Year Published: 2020

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