LAUSR

The principles of the influence of cutting conditions on the surface temperature in the wafering zone of silicate glass using an abrasive tool have been determined. The features and types of destruction of the layer of inorganic material adjacent to the wafering surface have been discussed. The similarity of destruction processes has been indicated upon wafering silicate glass, sapphire, and almazote. It has been shown that the thickness of the defect layer that is formed upon wafering depends nonmonotonously on the load that presses the wafering disc to the treated detail. The routes towards the decrease in the defect layer thickness have been considered.