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This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte… Click to show full abstract
This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The mathematical model of electron-hole recombination, constructed on the basis of a system of spatially inhomogeneous nonlinear integro-differential Smoluchowski equations, is illustrated. The continuous algorithm of the Monte Carlo method and the discrete cellular automation algorithm used for the simulation of particle recombination in semiconductors are shown.
Journal Title: Optoelectronics, Instrumentation and Data Processing
Year Published: 2017
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