LAUSR

A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be efficiently reduced compared to conventional substrates. Based on the results, a conventional photolithography process was employed to implement the reverse-trapezoid homogeneous structures using a negative photoresist (NPR). Simply accessible photolithography using NPR enabled high-resolution patterning and thus large-area scalable device architectures could be obtained. The a-IGZO TFTs on the reverse-trapezoid-structured PDMS exhibited a maximum saturation mobility of 6.06 cm2V−1s−1 under a drain bias voltage of 10 V with minimal strain stress. As a result, the proposed a-IGZO TFTs, including stress-released architecture, exhibited highly enhanced mechanical properties, showing saturation mobility variation within 12% under a strain of 15%, whereas conventional planar a-IGZO TFTs on PDMS showed mobility variation over 10% even under a 1% strain and failed to operate beyond a 2% strain.