LAUSR

A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during chemical lift-off (CLO), without requiring a sacrificial layer or extra process steps. The LED arrays resided on a stamp that was coated with an adhesive layer. After the layer with the LEDs was transferred to the new substrates, the stamp was removed by acetone to complete the preparation. Over 3 × 3 cm2 LED arrays transferred to various substrates without any damage and misorientation. We also found that the optical and electrical characteristics improved after transfer due to decease in built-in stress. This simple and practical method is expected to greatly facilitate the development of transferrable full color GaN microLEDs on various substrates with either greatly reduced or no damage.