LAUSR

4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by applying reactive nonaqueous fluids to self-sharpening fixed abrasive pads has been proposed in our former research works. Furthermore, to improve the material removal rate and reduce the surface roughness Sa value of 4H-SiC substrates of the Si face, the effect of organic acid, H2O2, and Triton X-100 in nonaqueous slurry on 4H-SiC polishing was investigated. The MRR of 12.83 μm/h and the Sa of 1.45 nm can be obtained by the orthogonally optimized slurry consisting of 3 wt% H2O2, 0.5 wt% Triton X-100 at pH = 3. It is also found that the addition of different levels of oxidant H2O2 and surfactant Triton X-100 components not only increased the MRR of the 4H-SiC substrates of the Si face but also achieved a lower Sa value; in that, the polishing efficiency of the Si side of the 4H-SiC wafers and the surface quality of the 4H-SiC wafers could be effectively improved by the optimization of the polishing slurry.