LAUSR

The advent of graphene has catalyzed extensive exploration into two-dimensional (2D) materials, among which gallium selenide (GaSe)—a layered semiconductor—stands out for its promise in optoelectronic and nanoscale device applications. To elucidate the intricate correlation between structure and electronic properties, and to enable performance optimization at the atomic scale, we employ advanced characterization methodologies. In this work, atomic-resolution Scanning Transmission Electron Microscopy (STEM) and Electron Energy Loss Spectroscopy (EELS) are utilized to investigate the structural and electronic characteristics of GaSe. STEM imaging confirms the atomic-level uniformity and verifies the β-GaSe phase, while EELS measurements reveal a thickness-dependent, tunable bandgap that decreases from 3.8 eV to 2.4 eV as the crystal thickness increases from approximately 1 nm to 30 nm—a trend attributable to quantum confinement effects.