LAUSR

In this work, the deposition of titanium nitride (TiN) thin film using direct current (DC) sputtering technique and its application as diffusion barriers against copper interconnect was presented. The deposited film was analyzed by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscopy (XPS) techniques. XRD patterns showed the face-centered cubic (FCC) structure for the TiN/SiO2/Si film, having (111) and (200) peaks and TiN (111), Cu(111), and Cu(200) peaks for Cu/TiN/SiO2/Si film. FESEM images revealed that the grains were homogeneously dispersed on the surface of the TiN film, having a finite size. XPS study showed that Ti2p doublet with peaks centered at 455.1 eV and 461.0 eV for TiN film was observed. Furthermore, the stoichiometry of the deposited TiN film was found to be 0.98. The sheet resistance of the TiN film was analyzed by using a four-point probe method, and the resistivity was calculated to be 11 μΩ cm. For the utilization, TiN film were tested for diffusion barrier performance against Cu interconnect. The results exhibited that TiN film has excellent performance in diffusion barrier for copper metallization up to a temperature of 700 °C. However, at a higher annealing temperature of 800 °C, the formation of Cu3Si and TiSi2 compounds were evident. Thus, stoichiometric TiN film with high thermal stability and low resistivity produced in this study could be applied for the fabrication of microelectronic devices.