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Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

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The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the… Click to show full abstract

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

Keywords: low voltage; current generator; ultra low; electromagnetic interference; interference

Journal Title: Journal of Low Power Electronics and Applications
Year Published: 2021

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