LAUSR

In this paper, an In0.53Ga0.47As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N+-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditional transverse EHBTFETs, the proposed DGNP-EHBTFET can improve device performance without sacrificing the chip density, and can simplify the manufacturing process. The introduction of the dual-metal left-gate and the N+-pocket can shift the point-tunneling junction and adjust the energy band and the electric field in it, aiming to substantially degrade the OFF-state current (IOFF) and maintain good ON-state performance. Moreover, the line tunneling governed by the tunneling-gate and the right-gate can further regulate and control IOFF. By optimizing various parameters related to the N+-pocket and the gate electrodes, DGNP-EHBTFET’s IOFF is reduced by at least four orders of magnitude, it has a 75.1% decreased average subthreshold swing compared with other EHBTFETs, and it can maintain a high ON-state current. This design greatly promotes the application potential of EHBTFETs.