LAUSR

Highly efficient indium gallium nitride (InGaN)-based yellow light-emitting diodes (LEDs) with low efficiency droop have always been pursued for next-generation displays and lighting products. In this work, we report an InGaN quantum barrier (QB) with linear-increase In-composition along [0001] direction for InGaN-based yellow LEDs. With the In-composition in QBs systematically engineered, three QB structures including linear-increase QB (LIQB), linear-decrease QB (LDQB) and commonly used flat QB (FQB) were investigated by simulation. The results show that the LIQB not only yields enhanced electron confinement, but also contributes to suppressed polarization field. Consequently, the yellow LED incorporated with LIQBs demonstrates improved radiative recombination rates and the efficiency droop is alleviated. Under a current density of 100 A/cm2, the efficiency droop ratios of LEDs with FQBs, LDQBs and LIQBs are 58.7%, 62.2% and 51.5%, respectively. When current density varies from 1 A/cm2 to 60 A/cm2, the blueshift values of peak emission wavelength for LEDs with FQBs, LDQBs and LIQBs are 14.4 nm, 16.5 nm and 13.0 nm, respectively. This work is believed to provide a feasible solution for high-performance InGaN-based LEDs in long-wavelength spectral region.