LAUSR

SiC substrates have outstanding advantages over traditional materials in power device application, and are mainly prepared by a physical vapor transport method (PVT). Whether the PVT furnace works by resistance heating or induction heating, both face the problem of the deterioration of growth conditions during a long-term process. The relative position of the thermal field directly affects the crystal growth conditions, but the law of specific influence and the change in physical environment inside the thermal field have not been made sufficiently clear and lack systematic research. Therefore, SiC single crystal growth, with different directions and rates in the direction of movement of the heating module, was modeled using a simulation method, and the law of variation of the physical field, including heat flux, temperature, powder porosity and growth rate parameters under different schemes, was analyzed. The study indicates that the decay of raw materials is the primary reason why growth conditions cannot be maintained. The results verified that different coils’ modes of movement have different effects on the improvement or adjustment of SiC crystals’ growth conditions. Under the same temperature control conditions, the coils’ movement rates of 200 μm/h, 0, −200 μm/h and −400 μm/h correspond to the average growth rates of 140, 152, 165 and 172 μm/h, respectively. The results show that downward displacement of the coils is beneficial in compensating for the deterioration of growth conditions, but it is easier to form convex surfaces and is not conducive to expanding diameter growth. This also verifies that the desired crystal growth state can be obtained by adjusting the position of the thermal field.