LAUSR

We investigated the thermal stability of a 1Mbit OxRRAM array embedded in 28 nm COMS technology. A back-end-of-line (BEOL) solution with a TaN–Ta interfacial layer was proposed to eliminate the failure rate after reflow soldering assembly at 260 °C. By utilizing a TaN–Ta interfacial layer (IL), the oxygen defects in conductive filament were redistributed, and electromigration lifetimes of Cu-based damascene interconnects were improved, which contributed to optimization. This work provides a potential solution for the practical application of embedded RRAM beyond the 28 nm technology node.