LAUSR

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM with fast performance comparable to that of a static RAM, while solving the scaling issues faced by conventional MRAMs. However, owing to the decrease in supply voltage (VDD) and increase in process fluctuations, STT-MRAMs require an advanced sensing circuit (SC) to ensure a sufficient read yield in deep submicron technology. In this study, we propose a timing-based split-path SC (TSSC) that can achieve a greater read yield compared to a conventional split-path SC (SPSC) by employing a timing-based dynamic reference voltage technique to minimize the threshold voltage mismatch effects. Monte Carlo simulation results based on industry-compatible 28-nm model parameters reveal that the proposed TSSC method obtains a 42% higher read access pass yield at a nominal VDD of 1.0 V compared to the SPSC in terms of iso-area and -power, trading off 1.75× sensing time.