The demand for synthetic diamonds and research on their use in next-generation semiconductor devices have recently increased. Microwave plasma chemical vapor deposition (MPCVD) is considered one of the most promising… Click to show full abstract
The demand for synthetic diamonds and research on their use in next-generation semiconductor devices have recently increased. Microwave plasma chemical vapor deposition (MPCVD) is considered one of the most promising techniques for the mass production of large-sized and high-quality single-, micro- and nanocrystalline diamond films. Although the low-pressure resonant cavity MPCVD method can synthesize high-quality diamonds, improvements are needed in terms of the resulting area. In this study, a large-area diamond synthesis method was developed by arranging several point plasma sources capable of processing a small area and scanning a wafer. A unit combination of three plasma sources afforded a diamond film thickness uniformity of ±6.25% at a wafer width of 70 mm with a power of 700 W for each plasma source. Even distribution of the diamond grains in a size range of 0.1–1 μm on the thin-film surface was verified using field-emission scanning electron microscopy. Therefore, the proposed novel diamond synthesis method can be theoretically expanded to achieve large-area films.
               
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