LAUSR

Ag has the lowest electrical resistivity among all metals, and at the same time, the best optical properties in the visible and near-IR spectral range; it is therefore the most widely employed material for thin-metal-film-based transparent conductors. In this work, an ultra-thin transparent silver film electrode with aluminum as seed layer was prepared by a resistive thermal evaporation technique. Using a range of electrical, optical and surface morphology techniques, it can be noted that the presence of the thin layer of aluminum changes the growth kinetics (nucleation and evolution) of the thermal evaporation of Ag, leading to silver films with smooth surface morphology and high electrical conductivity, and the threshold thickness of the silver film is reduced. It is inferred that the aluminum layer showed a good infiltration effect on the ultra-thin silver film, by analyzing the transmittance spectrum, sheet resistance and surface morphology. Moreover, the average transmittance of silver film with 10 nm is 40% in the 400–2500 nm band, whereas the sheet resistance is 13 Ωsq −1. A series of experiments show that the introduction of Al seed layer has certain effect on improving the properties of transparent conductive silver films. Then, a new method for deposition of 1 nm Al seed layer was proposed; that is, the 1 nm aluminum infiltrated layer is divided into two or more layers, and the average transmittance of silver film with 5 nm is 60% in the 400–2500 nm band, whereas the sheet resistance does not exceed 100 Ω sq−1.