LAUSR

Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This review explores the evolution of memristor theory for Ga2O3-based materials, emphasising capacitive memristors and their ability to integrate resistive and capacitive switching mechanisms for multifunctional performance. We discussed the state-of-the-art fabrication methods, material engineering strategies, and the current challenges of Ga2O3-based memristors. The review also highlights the applications of these memristors in memory technologies, neuromorphic computing, and sensors, showcasing their potential to revolutionise emerging electronics. Special focus has been placed on the use of Ga2O3 in capacitive memristors, where their properties enable improved switching speed, endurance, and stability. In this paper we provide a comprehensive overview of the advancements in Ga2O3-based memristors and outline pathways for future research in this rapidly evolving field.