This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state… Click to show full abstract
This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices with high voltage stress over 0.6 V because of thermal energy in conducting filament. In addition, SPICE simulation was conducted with verilog-A to verify this retention fail mechanism. We believe these results are potentially useful to the analysis on the retention fail properties of ReRAM devices as well as the system-level simulations with reliability-awareness.
Journal Title: Applied Physics Express
Year Published: 2020
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