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We established an oxygen-based digital etching technique to fabricate the recessed gate structure for RF GaN HEMT. The digital etching rates were 2.5 nm cycle–1 and 0.5 nm cycle–1 with… Click to show full abstract
We established an oxygen-based digital etching technique to fabricate the recessed gate structure for RF GaN HEMT. The digital etching rates were 2.5 nm cycle–1 and 0.5 nm cycle–1 with 40 W RF bias and 0 W RF bias for ICP oxidation, respectively. The roughness of the surface was around 0.1 nm. The V th of the recessed gate GaN HEMTs can be adjusted from D-mode to E-mode. The GaN HEMT with 110 nm gate length showed a maximum peak gm value of 440 mS mm−1 after 6 cycles of digital etching with V th near 0 V and ft values nearby 42 GHz.
Journal Title: Applied Physics Express
Year Published: 2021
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