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Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices

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The leakage current and flat-band voltage (V FB) instability of NO-nitrided SiC(11 2¯ 0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties,… Click to show full abstract

The leakage current and flat-band voltage (V FB) instability of NO-nitrided SiC(11 2¯ 0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler–Nordheim current by about 1 MV cm−1, leading to pronounced leakage current. Synchrotron radiation X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO2/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the enhancement of V FB instability of nitrided a-face MOS devices against electron and hole injection.

Keywords: impact nitridation; sic 112; nitridation reliability; 112 mos; mos devices; reliability sic

Journal Title: Applied Physics Express
Year Published: 2022

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