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A Si infrared photodetector that operates without requiring to be cooled was fabricated, and its properties were evaluated. The function of this device is to detect, as an electrical signal,… Click to show full abstract
A Si infrared photodetector that operates without requiring to be cooled was fabricated, and its properties were evaluated. The function of this device is to detect, as an electrical signal, carrier density changes due to stimulated emission utilizing a phonon-assisted process via dressed photons. The photosensitivities of this device were 0.21 A W−1, 0.03 A W−1, and 0.01 A W−1 for wavelengths of 1.3 μm, 1.6 μm, and 2.0 μm, respectively, when the forward current density was 50 A cm−2, and the device exhibited a higher sensitivity for wavelengths greater than the cutoff wavelength.
Journal Title: Applied Physics Express
Year Published: 2022
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