In this work, the phase transition of a highly disordered amorphous VO2 film is studied. It is found that the electronic transport behavior follows the Arrhenius or Vogel–Tammann–Fulcher model, showing… Click to show full abstract
In this work, the phase transition of a highly disordered amorphous VO2 film is studied. It is found that the electronic transport behavior follows the Arrhenius or Vogel–Tammann–Fulcher model, showing different thermal sensitivity under different thicknesses. Based on it, the concept of a prototype device with overheating protection capability is demonstrated. The results, reflecting the relationship between phase transition and structural disorder, open up a unique pathway to understand the metal insulator transition in strongly correlated electronic systems and to its functionality in electronic devices.
               
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