LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Inversion-Mode In0.53Ga0.47 As MOSFET with f T = 275 GHz and high V eff

Photo by colinwatts from unsplash

In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To… Click to show full abstract

In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s–1) is extracted for a possible explanation of the observed record f T performance.

Keywords: inversion; inversion mode; in0 53ga0; ghz; mode in0

Journal Title: Applied Physics Express
Year Published: 2023

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.