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Ferroelectric photovoltaic (FePV) materials are naturally considered a new type of solid-state optoelectronic memory conducting with high storage densities and nonvolatile states. This work investigates ferroelectric properties of Sc0.2Al0.8N thin… Click to show full abstract
Ferroelectric photovoltaic (FePV) materials are naturally considered a new type of solid-state optoelectronic memory conducting with high storage densities and nonvolatile states. This work investigates ferroelectric properties of Sc0.2Al0.8N thin film with a remnant polarization of ~122 μC/cm2 and researches the switchable FePV effect and photo-diode characteristics of two-terminal Sc0.2Al0.8N devices. When adopting a two-dimensional material MoTe2 to form heterostructure, both the photo absorption spectrum and the conductivity of ScAlN based two-terminal device would be promoted, resulting in the photocurrent at the level of μA/cm2. This work suggests ScAlN can provide a promising FePV implementation for constructing high-performance optoelectronics.
Journal Title: Applied Physics Express
Year Published: 2023
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