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High repetition rate passively Q-switched laser on Nd:SRA at 1049 nm with MXene Ti3C2Tx

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A new disordered crystal Nd:SrAl12O19 (Nd:SRA) with an Nd3+ doping concentration of 5% was successfully grown using the Czochralski method. A diode-pumped Nd:SRA Q-switched laser operating at 1049 nm was… Click to show full abstract

A new disordered crystal Nd:SrAl12O19 (Nd:SRA) with an Nd3+ doping concentration of 5% was successfully grown using the Czochralski method. A diode-pumped Nd:SRA Q-switched laser operating at 1049 nm was demonstrated for the first time, to the best of our knowledge. Based on an MXene Ti3C2Tx sheet, a high repetition rate of 201 kHz and a Q-switched pulse width of 346 ns were obtained when the absorbed pump power was 2.8 W. The peak power and single pulse energy were 1.87 W and 0.65 μJ, respectively.

Keywords: mxene ti3c2tx; high repetition; repetition rate; switched laser; sra

Journal Title: Chinese Optics Letters
Year Published: 2020

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