LAUSR

Tb-doped ZnO thin films on quartz substrates were prepared at various deposition temperatures by using radio-frequency magnetron sputtering. The crystallographic characteristics were examined by using X-ray diffraction and showed a strong diffraction peak from the (002) planes of the ZnO. As the deposition temperature increased from 100° C and 200° C to above 300° C, the grain boundaries disappeared by merging together. The optical transmittance was over 80% in the wavelength region between 450 nm and 1100 nm regardless of the deposition temperature. The electrical properties were evaluated by using Hall effect measurements. As the deposition temperature was increased, the electron concentrations increased, but the mobility tended to decrease. These results show that the properties of ZnO:Tb thin films are influenced by the deposition temperature and that optimum electrical and optical properties can be obtained by controlling the deposition temperature.