Radiofrequency magnetron sputtering of silicon was applied onto zirconia surfaces by use of a non-doped Si wafer at 2%, 5%, 8%, and 10% oxygen volumes. Immediately after sputtering, the contact… Click to show full abstract
Radiofrequency magnetron sputtering of silicon was applied onto zirconia surfaces by use of a non-doped Si wafer at 2%, 5%, 8%, and 10% oxygen volumes. Immediately after sputtering, the contact angle was practically 0 for all oxygen volume specimens. In terms of sustainability of the hydrophilicity, however, 5% oxygen volume was found to be optimal. Scanning electron microscopy and energy dispersive X-ray spectroscopy clearly suggested the presence of silica layer on zirconia surfaces. The shear bond strength of the pre-treated zirconia and resin was 35.03±4.97 MPa, which was approximately 3.5 times higher than that of zirconia without any sputtering treatment (9.26±1.21 MPa). The failure mode of the pre-treated zirconia specimen was cohesive failure, whereas that of the control specimen was observed to be interface failure.
               
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