LAUSR

Indium doped zinc oxide (IZO) thin films were fabricated on glass substrates by spin coating technique for transparent conducting oxide (TCO) application. Effect of different indium concentration on their properties were investigated. IZO thin films were deposited on glass substrate using sol-gel spin coating techniques using zinc acetate dihydrate, indium nitrate hydrate, absolute ethanol, and monoethanolamine (MEA). The concentration of indium was varied at 1, 3, 4, and 5 at.%. to study the characteristics of the IZO thin films in terms of structural, optical, and electrical, which is to achieve high visibility of IZO as transparent conducting oxide. The UV-Vis examination of IZO thin film observed that the highest transparency of thin films was IZO with indium concentration of 4% which shows a75.6%. The optical band gap were calculated using Tauc’s plot and was found to be in the range between 3.10 to 3.2 eV. For electrical properties, the lowest resistivity was observed for IZO thin film at 4% doping concentration with a value of 3.25 Ωcm, while the highest resistivity was observed at IZO thin film at 1% which is 15.26 Ωcm.