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To specify the effects of modulating mechanism of Gd substitution on the dielectric properties for Ca1-xGdxCu3Ti4O12 system, the XRD, SEM and positron positron annihilation technique have been implemented. The results… Click to show full abstract
To specify the effects of modulating mechanism of Gd substitution on the dielectric properties for Ca1-xGdxCu3Ti4O12 system, the XRD, SEM and positron positron annihilation technique have been implemented. The results display that both grain size and vacancy-type defect concentration play important roles in controlling the dielectric properties of CaCu3Ti4O12. The dielectric properties are improved by adding an appropriate amount of Gd additives (x=0.01) but weakened by higher Gd doping content since this is closely related to the grain size and concentration of vacancy-type defect in the samples.
Journal Title: Defect and Diffusion Forum
Year Published: 2017
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