LAUSR

Sn and Si are the typical dopants for achieving tunable n-type conductivity of β-Ga2O3 single crystals grown from the melt. Here, we explore Zr doping in β-Ga2O3 as assessed with UV–vis-NIR, Hall Effect, I–V, and CV measurements and hybrid functional calculations. Single crystals were grown from the melt with nominal Zr doping between 0.1 and 0.5 at% using Czochralski and vertical gradient freeze methods in Ar + O2. Our results suggest that ZrGa behaves as a shallow donor, with a measured activation energy of ~10 meV. Our samples show an electron mobility ~73–112 cm2 V−1 s−1, resistivity ~0.08–0.01 ohm cm, and carrier density of n = 6.5 × 1017−5 × 1018 cm3 at room temperature.