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In this work, we demonstrate a tri-band perfect absorber with the maximal absorptance of 97% achieved in an ultra-thin silicon film metasurface (thickness, 60 nm, ~λ/10). Particularly, the resonant absorption… Click to show full abstract
In this work, we demonstrate a tri-band perfect absorber with the maximal absorptance of 97% achieved in an ultra-thin silicon film metasurface (thickness, 60 nm, ~λ/10). Particularly, the resonant absorption peaks are observed to be quantitatively adjustable in the frequency region via tuning the cavity size in the silicon metasurface. Simultaneously, the absorption efficiency remains at a high level for the tri-band spectrum. These features suggest a novel way to artificially manipulate the operation wavelength and hold potential applications in coloring displayer, filtering, hot-electron related optoelectronics.
Journal Title: Applied Physics Express
Year Published: 2019
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