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Cubic boron nitride (c-BN) films were grown on diamond (001) substrates by a new ion-beam-assisted molecular-beam-epitaxy (MBE) method with the irradiation of Ar+ ions and atomic nitrogen radicals (N*). From… Click to show full abstract
Cubic boron nitride (c-BN) films were grown on diamond (001) substrates by a new ion-beam-assisted molecular-beam-epitaxy (MBE) method with the irradiation of Ar+ ions and atomic nitrogen radicals (N*). From X-ray diffraction and cross-sectional transmission electron microscopy images, we confirmed the heteroepitaxial growth of single-domain c-BN(001) films on the diamond (001) substrates. Additionally, we revealed the growth phase diagram of BN films in the ion-beam-assisted MBE. This diagram indicates that the flux intensity of Ar+ ions should be higher than that of boron atoms for epitaxial c-BN growth.
Journal Title: Applied Physics Express
Year Published: 2017
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