LAUSR

We fabricated approximately 200-nm-thick BaSi2 films on Si(111) substrates at 600 °C. The formation of BaSi2 was demonstrated by X-ray diffraction and Raman spectroscopy. A reduction in the electron concentration (n = 2 × 1016 cm−3) by 3 orders of magnitude compared to that previously reported (n = 7 × 1019 cm−3) and resultant photoresponsivity enhancement by more than two orders of magnitude were achieved. The photoresponsivity increased with the bias voltage V bias applied between the top and bottom electrodes, and reached approximately 0.19 A/W at 2.0 eV, room temperature, and |V bias| = 0.5 V.