In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD
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DOI: 10.3390/nano12193496
Abstract: In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a… read more here.
Keywords: axis axis; 0001 sapphire; sapphire substrates; growth gan ... See more keywords