Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
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DOI: 10.1016/j.jcrysgro.2017.05.021
Abstract: Abstract We have fabricated self-assembled InN dots on GaN using 4H-SiC(0001) vicinal substrates (4° off toward [11–20]). The size and density of InN dots were well controlled by changing the deposition amount and the growth… read more here.
Keywords: sic 0001; growth inn; 0001 vicinal; inn dots ... See more keywords