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   Articles with "001 ga2o3" as a keyword



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Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3

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recommendations! Published in 2021 at "APL Materials"

DOI: 10.1063/5.0051340

Abstract: Chemical and electrical measurements of Ti/(010) β-Ga2O3 and Ti/(001) β-Ga2O3 interfaces were conducted as a function of annealing temperature using x-ray photoelectron spectroscopy (XPS), current density–voltage (J–V), and capacitance–voltage (C–V) measurements. XPS revealed partial Ti… read more here.

Keywords: 001 ga2o3; ga2o3; analysis contacts; electrical chemical ... See more keywords

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

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recommendations! Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0138736

Abstract: In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with… read more here.

Keywords: hcl gas; ga2o3 substrates; 001 ga2o3; dry etching ... See more keywords

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

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recommendations! Published in 2023 at "APL Materials"

DOI: 10.1063/5.0142746

Abstract: Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is demonstrated… read more here.

Keywords: alxga1 2o3; 2o3 thin; ga2o3 substrates; 001 ga2o3 ... See more keywords

Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography

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recommendations! Published in 2024 at "Applied Physics Express"

DOI: 10.35848/1882-0786/ad5bbe

Abstract: We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The… read more here.

Keywords: topography; schottky barrier; 001 ga2o3; reverse leakage ... See more keywords