Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3
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DOI: 10.1063/5.0051340
Abstract: Chemical and electrical measurements of Ti/(010) β-Ga2O3 and Ti/(001) β-Ga2O3 interfaces were conducted as a function of annealing temperature using x-ray photoelectron spectroscopy (XPS), current density–voltage (J–V), and capacitance–voltage (C–V) measurements. XPS revealed partial Ti… read more here.
Keywords: 001 ga2o3; ga2o3; analysis contacts; electrical chemical ... See more keywords
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
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DOI: 10.1063/5.0138736
Abstract: In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with… read more here.
Keywords: hcl gas; ga2o3 substrates; 001 ga2o3; dry etching ... See more keywords
Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates
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DOI: 10.1063/5.0142746
Abstract: Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is demonstrated… read more here.
Keywords: alxga1 2o3; 2o3 thin; ga2o3 substrates; 001 ga2o3 ... See more keywords