GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-53949-x
Abstract: We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized… read more here.
Keywords: grown patterned; gaas epilayers; epilayers grown; 001 silicon ... See more keywords
Slip-free processing of (001) silicon wafers under 1064 nm laser ablation.
Sign Up to like & getrecommendations! Published in 2017 at "Applied optics"
DOI: 10.1364/ao.56.004900
Abstract: Slip phenomenon on a (001) silicon surface under 1064 nm laser ablation was studied by experiments and simulations. The surface morphologies of the silicon wafers after laser irradiation were observed using an optical microscope. The… read more here.
Keywords: slip; ablation; 001 silicon; laser ablation ... See more keywords
Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator.
Sign Up to like & getrecommendations! Published in 2019 at "Optics letters"
DOI: 10.1364/ol.44.000767
Abstract: A compact, efficient, and monolithically grown III-V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) Si wafers using thick metamorphic buffers are… read more here.
Keywords: ingaas; 001 silicon; silicon insulator; ingaas nanolaser ... See more keywords