Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.04.042
Abstract: Abstract We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) in Ar main gas flow. The… read more here.
Keywords: carbon; acetone; deposition defected; defected graphene ... See more keywords
Endotaxial growth of FexGe single-crystals on Ge(001) substrates
Sign Up to like & getrecommendations! Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce00211h
Abstract: Revealing the structure-property relationship is nontrivial for the application of materials. The magnetic configurations of FeGe are strongly dependent on the internal structures and positions of ... read more here.
Keywords: endotaxial growth; single crystals; fexge single; crystals 001 ... See more keywords
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr04866c
Abstract: Epitaxial growth of III-V materials on a CMOS-compatible Si (001) substrate enables the feasibility of mass production of low-cost and high-yield Si-based III-V optoelectronic devices. However, the material dissimilarities between III-V and group-IV materials induce… read more here.
Keywords: 001 substrates; density; axis 001; low threading ... See more keywords
Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/1.5140072
Abstract: Comparative studies of the bandgap narrowing in antimony doped Ge layers grown on Si(001) and Ge(001) substrates are reported. The doping level in Ge:Sb layers was varied in such a way as to obtain structures… read more here.
Keywords: bandgap narrowing; grown 001; antimony; layers grown ... See more keywords
Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/40/10/101303
Abstract: Direct epitaxial growth III–V quantum dot (QD) structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration. However, epitaxial growth… read more here.
Keywords: epitaxial growth; iii quantum; quantum dot; 001 substrates ... See more keywords
Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
Sign Up to like & getrecommendations! Published in 2022 at "Molecules"
DOI: 10.3390/molecules27113636
Abstract: The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented.… read more here.
Keywords: 001 substrates; graphene; microscopy; 001 001 ... See more keywords
Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12193260
Abstract: The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and… read more here.
Keywords: 001 substrates; boron nitride; growth; microscopy ... See more keywords