Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4991363
Abstract: Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy… read more here.
Keywords: laser deposition; ga2o3; doped ga2o3; 010 ga2o3 ... See more keywords
Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3
Sign Up to like & getrecommendations! Published in 2021 at "APL Materials"
DOI: 10.1063/5.0051340
Abstract: Chemical and electrical measurements of Ti/(010) β-Ga2O3 and Ti/(001) β-Ga2O3 interfaces were conducted as a function of annealing temperature using x-ray photoelectron spectroscopy (XPS), current density–voltage (J–V), and capacitance–voltage (C–V) measurements. XPS revealed partial Ti… read more here.
Keywords: 001 ga2o3; ga2o3; analysis contacts; electrical chemical ... See more keywords