Integrated 100 V bootstrap diode with enhanced reverse recovery characteristics for eGaN‐field effect transistor gate drivers
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DOI: 10.1049/el.2019.3638
Abstract: An integrated 100 V bootstrap diode (DBST) with anode engineering based on the double epitaxial process for enhancement mode gallium nitride (eGaN) transistor gate drivers is first proposed in this Letter. On the anode side,… read more here.
Keywords: recovery; bootstrap diode; reverse recovery; 100 bootstrap ... See more keywords