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   Articles with "100 ga2o3" as a keyword



Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202400342

Abstract: In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes… read more here.

Keywords: czochralski grown; diffusion uphill; 100 ga2o3; diffusion czochralski ... See more keywords

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

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recommendations! Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5031183

Abstract: In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V and J − V… read more here.

Keywords: hfo2 al2o3; ga2o3; gate; hfo2 ... See more keywords

Epitaxial growth and band offsets of β -(ScxGa1− x)2O3 thin films grown on (100) β -Ga2O3 substrate

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0226675

Abstract: β-(ScxGa1−x)2O3 (x = 0–0.36) thin films were epitaxially grown on (100) β-Ga2O3 substrates by oxygen-radical-assisted pulsed-laser deposition. β-(ScxGa1−x)2O3 epilayers were coherently strained up to x = 0.30, although the presence of a structural disorder was implied when x > 0.2. The… read more here.

Keywords: spectroscopy; grown 100; thin films; 100 ga2o3 ... See more keywords

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga2O3 MOSFET

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recommendations! Published in 2024 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ad22fe

Abstract: We report the effect of HfO2 passivation on the electrical characteristics of (100) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). The atomic-layer-deposited HfO2 layer with negative defect charges enhances the transconductance and subthreshold slope. A significant positive… read more here.

Keywords: layer; atomic layer; 100 ga2o3; surface ... See more keywords