Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2019.2933186
Abstract: Trapping effects of a state-of-the-art 100-nm GaN-on-Si high-electron mobility transistor (HEMT) process for radio-frequency (RF) applications are characterized for the first time. Considering an operation with high peak-to-average power ratio (PAPR) signals, pulsed-RF measurements give… read more here.
Keywords: trapping effects; hemt; effects 100; 100 gan ... See more keywords
A Ka-Band High-Power Switchable Filtering Power Combiner MMIC in 100-nm GaN-on-Si
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3135633
Abstract: This article presents a Ka-band switchable filtering power combiner monolithic microwave integrated circuit (MMIC), which unifies the functionalities of the switch, bandpass filter, and power combiner. For effective integration, a codesign approach is proposed by… read more here.
Keywords: power; 100 gan; filtering power; switchable filtering ... See more keywords