Articles with "100 oriented" as a keyword



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Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputtering

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Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2021.149308

Abstract: Abstract a-axis (100) oriented Aluminium Nitride (AlN) favours transverse acoustic wave applications. We have been able to realize preferential (100) oriented AlN films on Molybdenum (Mo) coated Si substrate using reactive RF magnetron sputtering. X-ray… read more here.

Keywords: oriented aln; coated substrate; spectroscopy; 100 oriented ... See more keywords
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Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

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Published in 2018 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2018.01.031

Abstract: Abstract Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7–60 μm using DC sputtering to deposit the stressor layer are appropriate… read more here.

Keywords: spalling 100; 100 oriented; increased fracture; controlled spalling ... See more keywords
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Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures

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Published in 2019 at "Nanoscale Research Letters"

DOI: 10.1186/s11671-019-3177-6

Abstract: In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes,… read more here.

Keywords: 100 oriented; radial heterostructures; vertical 100; novel radial ... See more keywords

Ultrahigh-performance (100)-oriented polycrystalline silicon thin-film transistors and their microscopic crystal structures

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Published in 2017 at "Applied Physics Express"

DOI: 10.7567/apex.10.056501

Abstract: A multiline beam continuous-wave laser lateral crystallization (MLB-CLC) method was developed to realize a predominantly (100)-oriented polycrystalline silicon (poly-Si) film with a high biaxial tensile strain. Low-temperature poly-Si (LTPS) thin film transistors (TFTs) with an… read more here.

Keywords: oriented polycrystalline; 100 oriented; thin film; performance ... See more keywords