Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3386661
Abstract: This article investigates the impact of total ionizing dose (TID) on 100-V split-gate trench vertical double-diffused MOSFETs (SGT VDMOS). The experimental results for both ON-state and OFF-state irradiation are explored, focusing on the shift in… read more here.
Keywords: split gate; inline formula; gate trench; 100 split ... See more keywords