Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201905056
Abstract: Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal‐oxide‐semiconductor circuits, is a prerequisite for next‐generation high‐performance electronics and optoelectronics. However, the direct epitaxy of single‐crystalline GaN… read more here.
Keywords: 100 substrate; crystalline gan; crystalline; epitaxy single ... See more keywords
Semipolar ($$ 1\bar{1}01 $$11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science"
DOI: 10.1007/s10853-019-03473-0
Abstract: The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped… read more here.
Keywords: light emitting; ingan; 100 substrate; ingan gan ... See more keywords
Epitaxial LaFeO3 and LaFe0.75Zn0.25O3 thin films on SrTiO3 (STO) (100) substrate: Structural studies and high energy magnon excitations
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5025247
Abstract: The epitaxial films of LaFeO3 (LFO) and LaFe0.75Zn0.25O3 (LFZO) are grown on a SrTiO3 (STO) (100) substrate using pulsed laser deposition. The as-grown films have been investigated to study the structural properties and magnon excitations… read more here.
Keywords: thin films; temperature; 100 substrate; spectroscopy ... See more keywords
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy
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DOI: 10.1134/s1063784219040054
Abstract: Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation… read more here.
Keywords: aln gan; layers 100; gan layers; 100 substrate ... See more keywords
Molecular beam epitaxy of BaF2/CaF2 buffer layers on the Si(100) substrate for monolithic photoreceivers
Sign Up to like & getrecommendations! Published in 2017 at "Optoelectronics, Instrumentation and Data Processing"
DOI: 10.3103/s8756699017030153
Abstract: This paper describes the study of the surface morphology of BaF2 epitaxial films grown by means of molecular beam epitaxy in various growth regimes on a CaF2/Si(100) surface, which is performed by means of atomic… read more here.
Keywords: beam epitaxy; 100 substrate; molecular beam; buffer layers ... See more keywords