Pentavariate $V_{\mathrm{min}}$ Analysis of a Subthreshold 10T SRAM Bit Cell With Variation Tolerant Write and Divided Bit-Line Read
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2018.2813326
Abstract: Subthreshold and near-threshold operations are viable approaches towards reducing both static and dynamic power in Static Random Access Memory (SRAM). However, supply scaling in SRAM cells is severely limited by process variations. Additionally, cell performance… read more here.
Keywords: 10t sram; bit; sub; tex math ... See more keywords
A 2941-TOPS/W Charge-Domain 10T SRAM Compute-in-Memory for Ternary Neural Network
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2023.3241385
Abstract: In this paper, we present a 10T SRAM compute-in memory (CiM) macro to process the multiplication-accumulation (MAC) operations between ternary-inputs and binary-weights. In the proposed 10T SRAM bitcell, the charge-domain analog computations are employed to… read more here.
Keywords: neural network; 2941 tops; charge domain; 10t sram ... See more keywords
Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2945533
Abstract: We experimentally demonstrate the first static random-access memory (SRAM) arrays based on carbon nanotube (CNT) field-effect transistors (CNFETs). We demonstrate 1 kbit (1024) 6 transistor (6T) SRAM arrays fabricated with complementary metal-oxide-semiconductor (CMOS) CNFETs (totaling… read more here.
Keywords: sram cells; carbon nanotube; 10t sram; kbit ... See more keywords
Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Low Power Electronics and Applications"
DOI: 10.3390/jlpea7030024
Abstract: In this paper, an ultra-low power (ULP) 10T static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates at sub-threshold voltage. The proposed SRAM has the tendency to operate at… read more here.
Keywords: 10t sram; ultra low; power; sram ... See more keywords