A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation
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DOI: 10.1109/jstqe.2023.3288674
Abstract: In this article, we present 10 $\mu$m diameter SPADs fabricated in 110 nm CIS technology based on an N+/HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers… read more here.
Keywords: doping compensation; 110 cis; inline formula; cis technology ... See more keywords