Signal and Noise Performance of a 110-nm CMOS Technology for Photon Science Applications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2903982
Abstract: This paper presents a study of the noise behavior of MOSFET devices belonging to a 110-nm CMOS technology in view of applications to the design of low-noise, low-power analog circuits in X-ray detection at free… read more here.
Keywords: science; technology; cmos technology; noise ... See more keywords
Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.455513
Abstract: This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS… read more here.
Keywords: 110 cmos; avalanche diodes; single photon; photon avalanche ... See more keywords