Flux-dependent Epitaxial Recrystallization of Amorphized Si(111) Layers Due to Oblique Argon Ion Sputtering
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DOI: 10.1080/10584587.2019.1675010
Abstract: Abstract Si(111) substrates, having more atoms available at the surface, are currently being exploited for nano-device fabrication. Epitaxial recrystallization of Si(111) layers amorphized under 80 keV Ar+ ion sputtering at off-normal incidence of 50° with 1 × 1017… read more here.
Keywords: recrystallization; ion sputtering; epitaxial recrystallization; flux dependent ... See more keywords